Researchers at the University of Tokyo have used metal germanides at the metal-germanium interface, with suitable surface crystal planes, to improve contact resistance and device performance in germanium transistors. Germanium has high electron and hole mobilities, and has been demonstrated in MISFETs (metal-insulator-semiconductor FETs), but parasitic resistance and off-state leakage at the source-drain inhibit performance. …
Read full article: Germanium transistors show promise again