Silicon doping in GaN-based vertical-cavity surface-emitting lasers (VCSELs) could reduce complexity and improve blue laser efficiency, claims a team formed between Meijo University Nagoya University. “GaN-based vertical-cavity surface-emitting lasers are expected to be adopted in various applications, such as retinal scanning displays, adaptive headlights, and high-speed visible-light communication systems,” said researcher Tetsuya Takeuchi of Meijo …
Read full article: Silicon doping comes to the rescue of vertical cavity GaN lasers