Leti has developed a new light-sensing device that integrates photodiodes below the buried oxide (BOX) of FDSOI transistors, making the transistors very sensitive to visible light. Photodiodes were co-integrated in the SOI substrate, replacing conventional FDSOI transistor backgate. This device architecture may lead not only to very small pixels with maximized fill factor, but also …
Read full article: Leti integrates photodiodes below BOX of FD-SOI transistors