At the 75th IEDM from December 3rd to the 7th in San Francisco, TSMC is giving a paper on a 2D nanosheet GAA transistor. The transistor with a 40nm gate width produced a drive current of 410microamps per micron at Vds of 1V. TSMC uses a transition-metal dichalcogenide monolayer for the semiconducting channel in a …
The post TSMC’s 2D GAA transistor appeared first on Electronics Weekly .