TI has introduced a 60-V N-channel power FemtoFET power transistor in a 1.53×0.77mm silicon-based package with a typical on-resistance (Rdson) of 54m designed to replace standard small-signal mosfets in space-constrained industrial load-switch applications. The CSD18541F5 expands TI’s NexFET technology portfolio of FemtoFET mosfets to include higher voltages and manufacturing-friendly footprints. CSD18541F5 key features and benefits …