Toshiba has announced its next generation of super-junction deep trench semiconductor technology for power mosfets. Based on the DTMOS V process, devices are claimed to operate with lower EMI noise and with reduced on-resistance compared to previous DTMOS IV mosfets. As with DTMOS IV, V is is based on a single epitaxial process involving deep …
PCIM: Toshiba super-junction mosfets cut resistance and noise