Infineon Technologies is aiming at 1,200V 10kW loads with a family of half-bridge gate drivers for IGBTs and silicon carbide mosfets. Called the 2ED132xS12x family, they are ruggedised by protection against negative voltage transient, shoot-through and automatic (±5%) over-current shut-down, and have under-voltage lock-out. Over-current detection to output shut-down, can be as short at 1μs. …
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