Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. It indicates Transphorm’s ability to support future automotive power systems as well as three–phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will …
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