Japanese gallium oxide power device start-up Flosfia has raised Y750m (£5m) in series B funding. The firm, a spin-out from the Kyoto University, is aiming to commercialise crystalline α-Ga2O3 (corundum/sapphire/ruby structure) in power transistors and Schottky diodes – with the intention of manufacturing 600V TO-220 diodes in 2018 to compete against silicon carbide power devices. …
Read full article: Gallium oxide power device firm gets £5m in second-round funding