Rensselaer Polytechnic Institute and the University of New Mexico have got together to develop a way of growing cubic GaN on silicon substrates. Compared with the hexagonal GaN used in all commercial leds, cubic GaN has a lower bandgap and therefore emits longer weavelengths for a given level of indium doping – potentially stretching efficient …
Read full article: Cubic GaN on silicon substrates, and the green gap