Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ RDS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ and 500mΩ RDS(on) parts, creating a significant portfolio of available devices. The 650V HEMTs are all qualified to JEDEC standards for chip and package. More, …
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