Micron has begun sampling an 8-high 24GB HBM3 Gen2 memory with bandwidth greater than 1.2TB/s and pin speed over 9.2Gb/s. It is built on Micron’s 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. A 12-high stack with 36GB capacity …
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