Scaling and wafer bonding in a cooperation between Kioxia and Western Digital have created a “218 layer 3D flash 1Tbit triple-level-cell and quad-level-cell with four planes, and features lateral shrink technology to increase bit density by over 50%,” according to Kioxia. Co-developed CBA (CMOS directly bonded to array) technology allows CMOS wafers and cell array …
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